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TC58NYG0S3HBAI6 Toshiba Parallel Nand Flash 1.8V 1G Bit 128M X 8 67 Pin VFBGA

Sunbeam Electronics (Hong Kong) Limited
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TC58NYG0S3HBAI6 Toshiba Parallel Nand Flash 1.8V 1G Bit 128M X 8 67 Pin VFBGA

Brand Name : Toshiba

Model Number : TC58NYG0S3HBAI6

Place of Origin : THAILAND

MOQ : package qty

Price : contact sales for updated price

Packaging Details : tape and reel

Delivery Time : 2 weeks

Payment Terms : T/T

Supply Ability : 1000+

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TC58NYG0S3HBAI6 Toshiba NAND Flash Parallel 1.8V 1G-bit 128M x 8 67-Pin VFBGA

Product Technical Specifications

EU RoHS Compliant
ECCN (US) 3A991.b.1.a
Part Status Active
Automotive Unknown
PPAP Unknown
Cell Type NAND
Chip Density (bit) 1G
Architecture Sectored
Boot Block No
Block Organization Symmetrical
Address Bus Width (bit) 28
Sector Size 128Kbyte x 1024
Page Size 2Kbyte
Number of Bits/Word (bit) 8
Number of Words 128M
Programmability Yes
Timing Type Asynchronous
Maximum Erase Time (S) 0.01/Block
Maximum Programming Time (ms) 0.7
Process Technology CMOS
Interface Type Parallel
Minimum Operating Supply Voltage (V) 1.7
Typical Operating Supply Voltage (V) 1.8
Maximum Operating Supply Voltage (V) 1.95
Programming Voltage (V) 1.7 to 1.95
Operating Current (mA) 30
Program Current (mA) 30
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 85
Command Compatible No
ECC Support Yes
Support of Page Mode No
Supplier Package VFBGA
Pin Count 67
Mounting Surface Mount
Package Height 0.7(Max)
Package Length 8
Package Width 6.5
PCB changed 67

Product Tags:

Toshiba Parallel Nand Flash

      

Parallel Nand Flash 1.8V

      

tc58nyg0s3hbai6

      
China TC58NYG0S3HBAI6 Toshiba Parallel Nand Flash 1.8V 1G Bit 128M X 8 67 Pin VFBGA wholesale

TC58NYG0S3HBAI6 Toshiba Parallel Nand Flash 1.8V 1G Bit 128M X 8 67 Pin VFBGA Images

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